发明名称 |
METHOD OF EVALUATING TRENCH AVERAGE DEPTH AND SWITCHING CHARACTERISTICS OF TRENCH GATE TYPE MOS SEMICONDUCTOR DEVICE, AND METHOD OF SELECTING SEMICONDUCTOR CHIP |
摘要 |
PROBLEM TO BE SOLVED: To provide a method of evaluating a trench average depth of a trench gate type MOS semiconductor device capable of evaluating and selecting a trench average depth and switching characteristics of a semiconductor chip in a wafer state by non-destruction and by a simple test circuit without using a high-voltage power supply, with respect to a wafer that undergoes a wafer process of the trench gate type MOS semiconductor device.SOLUTION: After termination of a step of burying a gate electrode 8 via a gate insulating film 7 in a trench 11 provided on a surface side of a semiconductor wafer 21 and a step of forming metal main electrodes 5 and 6 on both principal surfaces, a rectangular pulse voltage is applied from a predetermined negative voltage value to a predetermined positive voltage value, between the gate electrode 8 in a semiconductor chip 10 formed in the semiconductor wafer 21 and the rear face metal electrode 5 to measure a gate charging time A when a voltage reaches the predetermined positive voltage value. A trench average depth of the semiconductor chip 10 corresponding to the measured gate charging time A is calculated from a calibration curve indicating a relation between a known trench average depth and a gate charging time. |
申请公布号 |
JP2013171851(A) |
申请公布日期 |
2013.09.02 |
申请号 |
JP20120032809 |
申请日期 |
2012.02.17 |
申请人 |
FUJI ELECTRIC CO LTD |
发明人 |
OZAWA TAKESHI;KOYAMA YUKIO |
分类号 |
H01L21/336;H01L21/66;H01L29/739;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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