LIGHT EMITTING DIODE FOR EMITTING ULTRAVIOLET

摘要

PURPOSE: An ultraviolet light emitting device is provided to improve hole injection efficiency by doping a part of a quantum barrier layer with p-type impurities. CONSTITUTION: An active layer (40) is arranged between an n-type semiconductor layer (30) and a p-type semiconductor layer (60). The active layer includes AlGaN. The active layer includes at least one quantum well layer (41) and at least one quantum barrier layer (43). The quantum barrier layer is adjacent to the quantum well layer. A part of the quantum barrier layer is doped with p-type impurities.