发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To suppress increase in voltage in comparison with a semiconductor device before mounting even after a semiconductor element is mounted on a sub-mount.SOLUTION: In a semiconductor device 20, a semiconductor element 1 is bonded to a sub-mount 13; the semiconductor element 1 includes an n-side electrode 6 and an n-type semiconductor region 2; the n-side electrode 6 is bonded to the sub-mount 13; and the n-side electrode 6 contacts the n-type semiconductor region 2. A quantity (atoms%) of Ga contained in the n-side electrode 6 in a region of the n-side electrode 6, which is separated from a rear face 2b of the n-type semiconductor region 2 by 5 nm and over is not more than 3×10times larger than a quantity (atoms%) of Ga contained in the n-type semiconductor region 2. |
申请公布号 |
JP2013172012(A) |
申请公布日期 |
2013.09.02 |
申请号 |
JP20120035304 |
申请日期 |
2012.02.21 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
ADACHI MASAHIRO;NAKANISHI HIROMI;YAMANAKA YUICHIRO;KUMANO TETSUYA;IKEGAMI TAKATOSHI |
分类号 |
H01S5/022;H01S5/323;H01S5/343 |
主分类号 |
H01S5/022 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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