发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To suppress increase in voltage in comparison with a semiconductor device before mounting even after a semiconductor element is mounted on a sub-mount.SOLUTION: In a semiconductor device 20, a semiconductor element 1 is bonded to a sub-mount 13; the semiconductor element 1 includes an n-side electrode 6 and an n-type semiconductor region 2; the n-side electrode 6 is bonded to the sub-mount 13; and the n-side electrode 6 contacts the n-type semiconductor region 2. A quantity (atoms%) of Ga contained in the n-side electrode 6 in a region of the n-side electrode 6, which is separated from a rear face 2b of the n-type semiconductor region 2 by 5 nm and over is not more than 3×10times larger than a quantity (atoms%) of Ga contained in the n-type semiconductor region 2.
申请公布号 JP2013172012(A) 申请公布日期 2013.09.02
申请号 JP20120035304 申请日期 2012.02.21
申请人 SUMITOMO ELECTRIC IND LTD 发明人 ADACHI MASAHIRO;NAKANISHI HIROMI;YAMANAKA YUICHIRO;KUMANO TETSUYA;IKEGAMI TAKATOSHI
分类号 H01S5/022;H01S5/323;H01S5/343 主分类号 H01S5/022
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