TRANSISTOR HAVING INCREASED BREAKDOWN VOLTAGE

摘要

PROBLEM TO BE SOLVED: To provide a robust and highly reliable transistor having an increased breakdown voltage.SOLUTION: A transistor 200 comprises a source finger electrode 210 having a source finger electrode start portion 214, and a source finger electrode end portion 216. The transistor also includes a drain finger electrode 220, and the drain finger electrode includes a curved drain finger electrode end portion 226 having an increased radius of curvature r2. A robust and highly reliable transistor having a breakdown voltage increased by reduction of an electric field at the curved drain finger electrode end portion can thereby be obtained. In order to achieve an increased breakdown voltage, the curved drain finger electrode end portion may be extended over the source finger electrode start portion.