| 摘要 |
PROBLEM TO BE SOLVED: To implement a back side electrode structure having a sufficiently low back side contact resistance and being homogeneous, in an SiC semiconductor device.SOLUTION: In a method of forming a nickel silicide layer containing a titanium carbide by heating a layer containing nickel and titanium on an SiC semiconductor, the layer containing nickel and titanium is formed by vapor deposition or spluttering, and the nickel silicide layer is generated by heating at 1100 to 1350°C. In this case, the heating is performed under the condition that a rate of temperature increase is equal to or higher than 10°C/min and equal to or lower than 1350°C/min and heat is maintained for a time equal to or longer than 0 minute and equal to or shorter than 120 minutes. This heating condition allows acquisition of an SiC semiconductor device back side electrode having a sufficiently low contact resistance and being homogeneous. |
