| 摘要 |
PROBLEM TO BE SOLVED: To improve sound quality for acoustic equipment applications without using solder as a joining material, as well as eliminate the occurrence of a variation in bond strength due to oxidation of a component material or unevenness in the thickness of a junction.SOLUTION: A power semiconductor device 10 has a composition in which a back electrode 12 thereof is joined to a metal lead frame 13 by metal bumps 14, and a surface electrode 11 is connected by an internal lead 15 of the metal lead frame 13 and a metal wire 16. The metal lead frame 13 is composed of oxygen free copper; the metal bumps 14 are made from gold, silver or copper; the surface electrode 11 is a titanium film having an aluminum film formed thereon; and the metal wire 16 is a copper wire or an aluminum wire. In manufacturing, ultrasonic vibration is used to join the metal bumps, and elastic salients for avoiding contact with circuit faces are formed on the surface and the reverse side of the power semiconductor device, while also elastic salients for protecting upthrust needles are formed. |
