| 摘要 |
PROBLEM TO BE SOLVED: To provide chunk polycrystalline silicon having a surface carbon concentration of 0.5-35 ppbw.SOLUTION: In a method for cleaning a polycrystalline silicon chunk having carbon contamination on the surface, a heat treatment of the polycrystalline silicon chunk in a reactor at a temperature of 350-600°C is included, and the polycrystalline silicon chunk exists in an inert gas atmosphere during the heat treatment, and the polycrystalline silicon chunk after the heat treatment has a surface carbon concentration of 0.5-35 ppbw. |
