MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device including a high quality graphene having a lower resistivity than the conventional and fewer crystal defects as much as possible.SOLUTION: The manufacturing method of a semiconductor device comprises a step of forming a promoter layer having a face-centered cubic structure above the surface of a semiconductor substrate. The promoter layer is formed so that the (111) plane of the face-centered cubic structure is oriented in parallel with the surface of a semiconductor substrate. A catalyst layer having a face-centered cubic structure is formed on the promoter layer. The catalyst layer is formed so that the (111) plane of the face-centered cubic structure is oriented in parallel with the surface of a semiconductor substrate. A portion of the promoter layer in contact with the catalyst layer has a face-centered cubic structure. The catalyst layer is subjected to oxidation treatment and then subjected to reduction treatment thus planarizing the exposed surface of the catalyst layer. Finally, a graphene layer is formed on the catalyst layer.