<p>PURPOSE: A method for manufacturing a semiconductor device is provided to improve the electrical characteristics of fin field effect transistors by using an epitaxial layer as a channel for the fin field effect transistors. CONSTITUTION: A semiconductor substrate (100) including a first active region and a second active region is prepared. Mold patterns (120) having opening parts for exposing the upper surface of the semiconductor substrate are formed. First semiconductor fins and second semiconductor fins are formed. The upper surfaces of the mold patterns are selectively recessed. A gate electrode passes across the first semiconductor fins and the second semiconductor fins.</p>
