METHOD FOR MANUFACTURING SEMICONDUCTOR PACKAGE AND SEMICONDUCTOR PACKAGE MANUFACTURED USING THE SAME METHOD

摘要

PURPOSE: A semiconductor package manufacturing method and a semiconductor package manufactured by the method are provided to eliminate cost increasing factors by omitting a material, capable of enduring a processing temperature. CONSTITUTION: A first half etching is performed at one side of the base substrate (S200). A first plating layer is formed at the area selectively removed by the first half etching (S300). The resin of an insulating material is filled at the surface processed by the first half etching (S400). A second half etching is performed at the other surface of the base substrate (S500). A semiconductor chip is mounted at the area selectively removed by the second half etching (S600). [Reference numerals] (S100) Step of preparing a base substrate; (S200) Step of performing a first half etching on one side of the base substrate; (S250) Step of roughly plating; (S300) Step of plating a first plating layer; (S301) Step of plating a second plating layer; (S302) Step of additionally plating the second plating layer with the first plating layer; (S400) Step of filling an insulating material; (S401) Step of forming a solder resist layer with the photosensitive insulating material patterned by a photo lithography process; (S402) Step of removing an excessively coated non-photosensitive insulating material; (S403) Step of performing a second half etching on the other side of the base substrate; (S500) Step of performing a second half etching on the other side of the base substrate; (S600) Step of mounting a semiconductor chip