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发明名称
超高纵横尺寸比之介电材料蚀刻
摘要
一种蚀刻方法,用以藉由一碳基底遮罩蚀刻一超高纵横尺寸比特征部于一介电层中。透过该碳基底遮罩选择性蚀刻该介电层,其中该选择性蚀刻步骤于该碳基底遮罩上产生氟碳基底聚合物的净沉积。中止该选择性蚀刻。利用一修整步骤自该碳基底遮罩选择性移除该氟碳聚合物,使得该碳基底遮罩残留。中止该选择性移除氟碳聚合物步骤。透过该碳基底遮罩再一次选择性蚀刻该介电层,其中该第二选择性蚀刻步骤于该碳基底遮罩上产生氟碳基底聚合物的净沉积。
申请公布号
TWI407504
申请公布日期
2013.09.01
申请号
TW097104241
申请日期
2008.02.04
申请人
兰姆研究公司 美国
发明人
秦孔固;艾瑞克A 依德柏格
分类号
H01L21/3065;H01L21/311
主分类号
H01L21/3065
代理机构
代理人
许峻荣 新竹市民族路37号10楼
主权项
地址
美国
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