发明名称 ÉTAGE DE SORTIE FORME DANS ET SUR UN SUBSTRAT DE TYPE SOI
摘要 <p>A method for controlling an output amplification stage comprising first and second complementary SOI-type power MOS transistors, in series between first and second power supply rails, the method including the steps of: connecting the bulk of the first transistor to the first rail when the first transistor is maintained in an off state; connecting the bulk of the second transistor to the second rail when the second transistor is maintained in an off state; and connecting the bulk of each of the transistors to the common node of said transistors, during periods when this transistor switches from an off state to an on state.</p>
申请公布号 FR2970611(B1) 申请公布日期 2013.08.30
申请号 FR20110050313 申请日期 2011.01.14
申请人 STMICROELECTRONICS SA 发明人 SOUSSAN DIMITRI;MAJCHERCZAK SYLVAIN
分类号 H03F3/21 主分类号 H03F3/21
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