| 摘要 |
<p>30[Abstract][Title of the Invention] High Purity Copper Wire for Connecting Semiconductor Apparatuses[Object] By rendering a high purity copper wire such that its sectional structure becomes a dual structure, the wire's mechanical strength is increased, and thus the high purity copper wire with a sub-millimeter diameter is provided which is most suitable for a use with high temperature power semiconductor, which is subjected to numerous repetitions of ON/OFF operation in a short time.[Means to solve problems] The present invention relates to a high purity copper wire having an oxide film and made of a copper of apurityof 99. 999 to 99. 99994 mass %; the wire has a sectional structure in which top 10 grains have collectively a crystal grain area which accounts for 5 - 25 % of the total area of the sectional structure, and 80 % or more of this crystal grain area is interior to the surface layer defined as having a thickness of 1/20 or smaller of the wire diameter; the high purity copper wire is made bybeing continuously drawn and useful for connecting to a semiconductor apparatus.[Selected Drawing] Fig. 2</p> |
