INSULATION STRUCTURE AND METHOD FOR MANUFACTURING SAME

摘要

INSULATING STRUCTURE AND PRODUCTION METHOD OF SAME TECHNICAL FIELDAn insulating structure is formed that favorably maintains gap-fill capability of a narrow width pattern 5 in a memory cell while also preventing the formation of cracks in an insulator in a peripheral circuit, and has the memory cell and peripheral circuit within the same layer. The present invention provides an insulating structure comprising a substrate and a circuit pattern 10 formed on the substrate, wherein the circuit pattern has a narrow width region having a narrow width pattern of a width of 30 nm or less and a wide width region having a wide width pattern of a width of greater than 100 nm in the same layer, and the same insulating composition is 15 formed within the narrow width pattern and within the wide width pattern.Figure 1