发明名称 METHODS FOR REDUCING THE METAL CONTENT IN THE DEVICE LAYER OF SOI STRUCTURES AND SOI STRUCTURES PRODUCED BY SUCH METHODS
摘要 <p>Methods for producing silicon on insulator structures with a reduced metal content in the device layer thereof are disclosed. Silicon on insulator structures with a reduced metal content are also disclosed.</p>
申请公布号 SG191966(A1) 申请公布日期 2013.08.30
申请号 SG20130053798 申请日期 2012.01.27
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 GRABBE, ALEXIS;FLANNERY, LAWRENCE P.
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