NITRIDE SEMICONDUCTOR COMPONENT AND METHOD FOR THE PRODUCTION THEREOF

摘要

THE INVENTION RELATES TO A METHOD FOR PRODUCING A LAYER STRUCTURE (102) OF A NITRIDE SEMICONDUCTOR COMPONENT ON A SILICON SURFACE, SAID METHOD COMPRISING THE FOLLOWING STEPS: A SUBSTRATE (104) HAVING A SILICON SURFACE IS PREPARED; A NITRIDE NUCLEATION LAYER (106) CONTAINING ALUMINIUM IS DEPOSITED ON THE SILICON SURFACE OF THE SUBSTRATE; A NITRIDE BUFFER LAYER CONTAINING ALUMINIUM IS OPTIONALLY DEPOSITED ON THE NITRIDE NUCLEATION LAYER; A MASKING LAYER (108, B) IS DEPOSITED ON THE NITRIDE NUCLEATION LAYER OR ON THE FIRST NITRIDE BUFFER LAYER (A) IF PRESENT; AND A FIRST NITRIDE SEMICONDUCTOR LAYER (110) CONTAINING GALLIUM IS DEPOSITED ON THE MASKING LAYER, THE MASKING LAYER BEING DEPOSITED IN SUCH A WAY THAT SEPARATE CRYSTALLITES FIRST INTERGROW IN THE DEPOSITION STEP OF THE FIRST NITRIDE SEMICONDUCTOR LAYER, ABOVE A COALESCENCE LAYER THICKNESS, AND COVER AN AVERAGE SURFACE OF AT LEAST 0.16 �M2 IN A LAYER PLANE OF THE INTERGROWING NITRIDE SEMICONDUCTOR LAYER, PERPENDICULARLY TO THE DIRECTION OF GROWTH.