| 摘要 |
<p>The invention relates to a thin layer semiconductor material based on InAlNas mono layers deposited onto a flexible substrate, having an intermediate AlN layer which adheres to the flexible substrate on which they are deposited and being meant to be used in carrying out various optoelectronic devices. According to the invention, the material is obtained by a physical vapour-phase deposition method, by magnetron sputtering, in a reactive plasma containing indium, aluminium, nitrogen and argon atoms and ions, the material being made of two individual thin layers, a stoichiometric AlN layer as an intermediate layer deposited directly onto the flexible layer, at a thickness in the range of 10...100 nm, and a InAlN layer having a thickness in the range of 50...3000 nm, where 0.5≤x≤1.0 and 0≤y≤0.5, provided that 0.9≤x+y≤1.1. The material thickness ranges between 60...3100 nm, exhibits high adherence to the substrate and a prohibited band ranging between 1.2...3.8 eV and an emission by photoluminescence effect, measured at the ambient temperature, in the wavelength range of 430...1000 nm.</p> |
