ETCH WITH INCREASED MASK SELECTIVITY

摘要

OF THE DISCLOSUREETCH WITH INCREASED MASK SELECTIVITYA method for etching features in an etch layer in a plasma processing chamber is provided. An etch gas is flowed into the plasma processing chamber. A top outer electrode is maintained at a temperature of at least 150º C during the etching of the features. The etch gas is formed into a plasma, which etches the etch layer.FIG. 1