发明名称 |
METHOD FOR PERMANENT BONDING OF WAFER |
摘要 |
<p>Method for Permanent Bonding of Wafers AbstractThis invention relates to a method for bonding of a first contact surface (3) of a first substrate ( I ) to a second contact surface (4) of a second substrate (2) with the following steps, especially the following sequence:forming a re vo (5) in a surface layer (6) on the first contact surf ( the first surfacelayer (6) consisting at least largely of a native oxide material,at least partial filling of the reservoir(S) with a first educt or a first group of educts,the first contact surface (3) making contact with the second contact stir] ace (4) for formation of a prebond connection,forming a permanent bond between the first and second contact surface (3 4). at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer (7) of the second substrate. Figure 5</p> |
申请公布号 |
SG192180(A1) |
申请公布日期 |
2013.08.30 |
申请号 |
SG20130057286 |
申请日期 |
2011.04.08 |
申请人 |
EV GROUP E. THALLNER GMBH |
发明人 |
PLACH, THOMAS;HINGERL, KURT;WIMPLINGER, MARKUS;FLOETGEN, CHRISTOPH |
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