发明名称 METHOD FOR PERMANENT BONDING OF WAFER
摘要 <p>Method for Permanent Bonding of Wafers AbstractThis invention relates to a method for bonding of a first contact surface (3) of a first substrate ( I ) to a second contact surface (4) of a second substrate (2) with the following steps, especially the following sequence:forming a re vo (5) in a surface layer (6) on the first contact surf ( the first surfacelayer (6) consisting at least largely of a native oxide material,at least partial filling of the reservoir(S) with a first educt or a first group of educts,the first contact surface (3) making contact with the second contact stir] ace (4) for formation of a prebond connection,forming a permanent bond between the first and second contact surface (3 4). at least partially strengthened by the reaction of the first educt with a second educt contained in a reaction layer (7) of the second substrate. Figure 5</p>
申请公布号 SG192180(A1) 申请公布日期 2013.08.30
申请号 SG20130057286 申请日期 2011.04.08
申请人 EV GROUP E. THALLNER GMBH 发明人 PLACH, THOMAS;HINGERL, KURT;WIMPLINGER, MARKUS;FLOETGEN, CHRISTOPH
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