| 摘要 |
PROBLEM TO BE SOLVED: To make the most of the fact that electric characteristics of thin film transistors included in a circuit are so important in an active matrix display device that the performance of the display device depends on the electric characteristics, and accordingly to reduce variation in the electric characteristics of the thin film transistors by using an oxide semiconductor film including In, Ga and Zn for an inverted staggered thin film transistor.SOLUTION: Three layers, i.e., a gate insulating film, an oxide semiconductor layer and a channel protective layer, are successively formed by a sputtering method without being exposed to air. Further, in the oxide semiconductor layer, the film thickness in a region overlapping with the channel protective film is larger than that in a region in contact with a conductive film. |
