IMPURITY DIFFUSION LAYER FORMING COMPOSITION, METHOD OF MANUFACTURING SEMICONDUCTOR SUBSTRATE HAVING IMPURITY DIFFUSION LAYER, AND METHOD OF MANUFACTURING SOLAR CELL ELEMENT
摘要
<p>Provided is an impurity diffusion layer forming composition which contains: a compound having a donor element or a compound having an acceptor element; a dispersion medium; and a compound represented by general formula (I). In general formula (I), R1 and R2 independently represent a hydrogen atom or an alkyl group, and R3 represents an alkylene group. n represents an arbitrary integer greater than or equal to 1.</p>
