| 摘要 |
<p>First, in a first step (S101), a SiC substrate is arranged in an inert atmosphere. Next, in a second step (S102), graphene is formed on the surface of the SiC substrate by heating the SiC substrate in the inert atmosphere and evaporating the silicon on the surface of the SiC substrate. The second step (S102) is performed under production conditions such that the root-mean-square surface roughness of the surface of the formed graphene becomes 0.5 nm or less. Graphene with a surface having a root-mean-square surface roughness of 0.5 nm or less is in a single-layer state and has a high-quality crystal state in which the occurrence of crystal defects etc. is suppressed.</p> |
