| 摘要 |
PROBLEM TO BE SOLVED: To provide a mask-producing method for producing a defect-free epitaxially grown structure comprising one crystalline material on a substrate comprising the other crystalline material, the two materials having difference lattice constants.SOLUTION: A mask comprises the following two levels. A first level 10 comprises a first layer provided with a first opening, for example, first trench 1, the bottom of which is formed by a substrate 3 formed of the first material. A second level 20 comprises at least a barrier placed on at least two opposite sides of the trench 2. According to a preferred embodiment, the second level 20 comprises one or more second trenches 2 arranged perpendicularly to the first trench 1. The height hand width wof the first trench 1 and the height hand width wof the second trench 2 are such that defects generated in the epitaxially grown layer of a second material at the substrate 3 portion at the bottom of the first trench 1, and propagating in the direction of the second trenches are trapped in the first trench. |
