LAMINATE STRUCTURE INCLUDING OXIDE SEMICONDUCTOR THIN FILM LAYER, AND THIN FILM TRANSISTOR

摘要

A stacked layer structure including an oxide layer and an insulating layer, the oxide layer having a carrier concentration of 1018/cm3 or less and an average crystal diameter of 1 mum or more; and the crystals of the oxide layer being arranged in a columnar shape on the surface of the insulating layer.