| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which includes a transistor with no or less short-channel effect even having a structure with a shortened channel length.SOLUTION: In a semiconductor device comprising a transistor including an oxide semiconductor film including a channel formation region, a gate insulation film and a gate electrode layer, the transistor has a short channel length (not less than 5 nm and less than 60 nm, favorably not less than 10 nm and not more than 40 nm), and the gate insulation film has a thick thickness (equivalent nitrogen-containing oxide silicon film thickness of not less than 5 nm and not more than 50 nm, favorably not less than 10 nm and not more than 40 nm). Or in a semiconductor device with a single-drain structure comprising a transistor including an oxide semiconductor film including a channel formation region, a gate insulation film and a gate electrode layer, the transistor has a short channel length (not less than 5 nm and less than 60 nm, favorably not less than 10 nm and not more than 40 nm), and resistivity of a source region and drain region is not less than 1.9×10&OHgr;m and not more than 4.8×10&OHgr;m. |
