发明名称 |
SURFACE EMITTING SEMICONDUCTOR LASER, SURFACE EMITTING SEMICONDUCTOR LASER DEVICE, OPTICAL TRANSMISSION DEVICE AND INFORMATION PROCESSING UNIT |
摘要 |
PROBLEM TO BE SOLVED: To provide a highly reliable surface emitting semiconductor laser of a long resonator.SOLUTION: A surface emitting semiconductor laser 10 of a long resonator comprises: an n-type GaAs substrate 100; a lower DBR 102 composed of n-type AlGaAs; a resonator extension region 10d composed of n-type AlGaAs; an active region 106; a current constriction layer 110 composed of p-type AlAs; an upper DBR 108 composed of p-type AlGaAs; a p-side electrode 112; and an n-side electrode 114. As an impurity dopant of the resonator extension region 105, a group VI material or Sn is used. |
申请公布号 |
JP2013168641(A) |
申请公布日期 |
2013.08.29 |
申请号 |
JP20130005052 |
申请日期 |
2013.01.16 |
申请人 |
FUJI XEROX CO LTD |
发明人 |
KONDO TAKASHI;TAKEDA KAZUTAKA;NAKAYAMA HIDEO |
分类号 |
H01S5/183 |
主分类号 |
H01S5/183 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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