| 摘要 |
Disclosed herein are various methods of forming isolation structures, such as trench isolation structures, for semiconductor devices using a spin-on glass material or a flowable oxide material. In one example, the method includes forming a trench in a semiconducting substrate, forming a lower isolation structure comprised of an insulating material in at least the trench, wherein the lower isolation structure has an upper surface that is below an upper surface of the substrate, and forming an upper isolation structure above the lower isolation structure, wherein a portion of the upper isolation structure is positioned within the trench.
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