METHOD OF FORMING NITROGEN-FREE DIELECTRIC ANTI-REFLECTION LAYER

摘要

The present invention provides a method of forming a nitrogen-free dielectric anti-reflection layer comprising: introducing a reaction gas into the discharge tube until the reaction gas reaching a stable state; introducing the reaction gas into the reaction chamber and then generating a plasma, or generating a plasma and then introducing the reaction gas into the reaction chamber, wherein the time delay occurs between the two processes is utilized to perform the deposition of the nitrogen-free dielectric anti-reflection layer; finally stop introducing the reaction gas and then stop generating the plasma. The method can flexibly control the extinction coefficient and the refractive index of the nitrogen-free dielectric anti-reflection layer so as to obtain a straight photoresist pattern and greatly reduce the photoresist standing waves effect and photoresist poisoning effect.