| 摘要 |
A method of programming a vertical resistance memory device including a plurality of resistance memory cells arranged in a plurality of blocks includes a step of selecting a block from the plurality of blocks, a step of applying a set voltage to a word line selected from word lines, wherein the selected word line is connected through a corresponding horizontal electrode to a resistance memory cell to be programmed, a step of applying a set-inhibition voltage to unselected word lines of the word lines, a step of applying a bit voltage to a bit line selected from bit lines, wherein the selected bit line is electrically connected to the resistance memory cell via a string selection transistor selected from string selection transistors; and a step of applying a bit-inhibition voltage to unselected bit lines of the bit lines. |
