METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT, AND PHOTOELECTRIC CONVERSION ELEMENT MODULE

摘要

After forming a porous layer (2) on a first substrate (1), a part of the porous layer (2) is removed by pattern etching. After forming a buffer layer (600), an i-type nitride semiconductor layer (500), an n-type nitride semiconductor layer (400) and a metal layer (300) on the porous layer (2) and the first substrate (1), the first substrate (1) is removed from the buffer layer (600) using a cutting tool (4).