STRUCTURE WITH ELECTROLESS NICKEL PLATING FILM, SEMICONDUCTOR WAFER, AND PRODUCTION METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a structure with an electroless Ni plating film generating no crack and few warpage, a semiconductor wafer generating no crack in the Ni plating film and few warpage when forming a UBM in a semiconductor wafer by electroless plating, and a production method thereof.SOLUTION: A structure with an Ni plating film formed on a substrate with electroless Ni plating is provided: wherein, the Ni plating film is formed with electroless Ni plating with which a columnar crystalline Ni plating film is formed, and with electroless Ni plating with which an amorphous Ni plating film is formed; and, after the columnar crystalline Ni plating film is formed to 50-90% of the total film thickness of the Ni plating film, the amorphous Ni plating film is formed on the columnar crystalline Ni plating film to 10-50% of the total film thickness of the Ni plating film. A semiconductor wafer is also provided which has a structure in which the Ni plating film is formed on electrode surfaces of the substrate.