NORMALLY-OFF COMPOUND SEMICONDUCTOR TUNNEL TRANSISTOR

摘要

Disclosed herein are embodiments of a normally-off compound semiconductor tunnel field effect transistor having a drive current above 100 mA per mm of gate length and a sub-threshold slope below 60 mV per decade at room temperature, and methods of manufacturing such a normally-off compound semiconductor tunnel transistor. The compound semiconductor tunnel field effect transistor is fast-switching and can be used for high voltage applications e.g. 30V up to 600V and higher.