发明名称 Method for manufacturing memory structure for rechargeable oxide battery, involves forming foam structure from refractory material by foaming and freeze casting ceramic slurry, and infiltring foam structure with active memory material
摘要 The method involves forming a foam structure (4) from a refractory material by foaming and subsequently freeze casting ceramic slurry (7), and infiltring the foam structure with an active memory material (6) e.g. iron and iron oxide. Carbon templates are coated with ceramic suspension, and the carbon is burnt. The foam structure is subjected to a temperature treatment according to the infiltration with the active memory material, so that a sintering process of individual components is initiated, where the foam structure has an open porosity between 25 and 80 volume %.
申请公布号 DE102012202997(A1) 申请公布日期 2013.08.29
申请号 DE201210202997 申请日期 2012.02.28
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 BAUER, CHRISTIANE;BECKER, INES
分类号 H01M12/08;H01M4/134;H01M4/1395;H01M4/52;H01M4/80 主分类号 H01M12/08
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