Sensor comprises a micromechanical structure based on silicon integrated in the sensor chamber of a base wafer and a cover made of a transparent deposition layer and a sealing layer

摘要

Sensor comprises a micromechanical structure based on silicon integrated in the sensor chamber of a base wafer and a cover (13) made of a first layer (32) permeable to an etching medium and reaction products and a hermetically sealed second layer (34). The cover covers the base wafer in the region of the sensor chamber. An independent claim is also included for a process for the production of a sensor, comprising: filling the sensor chamber (28) in the base wafer with an oxide, especially CVD oxide or porous oxide; covering the sensor chamber (28) with a transparent deposition layer (32); removing the oxide in the sensor chamber using an etching medium; and applying a sealing layer (34) made of metal or insulator to hermetically seal the sensor chamber. Preferred Features: The deposition layer is made of polycrystalline silicon. The sealing layer is an insulator made of silicon nitride or silicon oxide, or aluminum.