| 摘要 |
<p>In the present invention, a reference voltage generating circuit is provided with a first transistor (22) and a second transistor (23), which are connected in series between a current source (21) and a ground. The gate insulating film of the first transistor (22) and that of the second transistor (23) are formed of a same kind of film having a same film thickness. An impurity contained in the gate electrode of the first transistor (22) and an impurity contained in the gate electrode of the second transistor are of conductivity types different from each other, or of a same conductivity type and contained at concentrations different from each other. The first transistor (22) has a gate width larger than that of the second transistor (23), and at the time of outputting a reference voltage to the outside, the first transistor (22) and the second transistor (23) operate in a sub-threshold region.</p> |
