发明名称 SEMICONDUCTOR ELEMENT, RADIATION DETECTOR, AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 <p>Provided are a semiconductor element, a radiation detector, and a method for manufacturing a semiconductor element, in which corrosion of the wiring layer can be suppressed even if the moisture-proofing of the external connection terminal is insufficient. At the connecting part (62), an oxide conductor layer (54) is provided so as to be adjacent (either above or below) a second wiring layer (44), and an insulating film (60) is formed on the second wiring layer (44) and the oxide conductor layer (54). The oxide conductor layer (54), and an external connection terminal (50) provided to the opening of a protective layer (34) provided on the insulating film (60), are electrically connected by a contact hole (52). The second wiring layer (44) is not in direct contact with the contact hole (52) or the external connection terminal (50), and is electrically connected via the oxide conductor layer (54).</p>
申请公布号 WO2013125377(A1) 申请公布日期 2013.08.29
申请号 WO2013JP53087 申请日期 2013.02.08
申请人 FUJIFILM CORPORATION 发明人 ITO TAKAAKI;OKADA YOSHIHIRO
分类号 H01L21/3205;G01T1/20;H01L21/768;H01L23/522;H01L27/144;H01L27/146;H01L29/786 主分类号 H01L21/3205
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