NON-VOLATILE STORAGE DEVICE AND MANUFACTURING METHOD THEREFOR

摘要

A resistance-changing layer (103) has a first resistance-changing layer (103a) including an oxygen-deficient first metal oxide and a second resistance-changing layer (103b) including an oxygen-deficient second metal oxide different from the first metal oxide. The second resistance-changing layer (103b) includes a non-metallic element (A) other than oxygen. When the composition of the first resistance-changing layer (103a) is represented by MOx, and the composition of the second resistance-changing layer (103b) is represented by NOyAz, the equation x < (y+z) is satisfied, the resistivity of the second resistance-changing layer (103b) is greater than the resistivity of the first resistance-changing layer (103a), and the film density of the second resistance-changing layer (103b) is less than the theoretical film density of the stoichiometric composition of the second metal oxide.