| 摘要 |
A method for forming a nitride layer is provided to reduce thermal stress of a lower pattern by forming a nitride layer at a low temperature lower than 350°C. A Si-containing raw material gas including at least one of SiH4, Si2H6, Si3H8, TEOS(Tetraethylorthosilicate), DCS(dichlorosilane), HCD(hexachlorosilane), TriDMAS(tri-dimethylaminosilane) and TSA(trisilylamine) is supplied to a substrate(110) to be absorbed to the surface of the substrate. The Si-containing raw material gas not absorbed to the substrate is purged. A nitrogen-containing reaction gas including at least one of N2, N2O, NH3 and NF3 is supplied to the substrate so that the Si-containing raw material gas absorbed to the surface of the substrate is nitrided to form a nitride layer(120). The nitrogen-containing reaction gas not reacting with the Si-containing raw material gas is purged. A time interval for which the Si-containing raw material gas is injected to the surface of the substrate can be greater than that for which the nitrogen-containing reaction gas is injected to the surface of the substrate. |
