发明名称 SEMICONDUCTOR ELEMENT MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor element manufacturing method which can ensure accurate alignment between a contact plug and a wiring line.SOLUTION: A semiconductor element manufacturing method comprises: forming a first etching stop insulation film 112, a first interlayer insulation film 120, a second etching stop insulation film 122 and a second interlayer insulation film 124 on a semiconductor substrate 10; forming a plurality of first mask patterns 134 and buffer insulation films 136 which cover both side walls of the first mask patterns; forming a plurality of second mask patterns 138a extending in parallel with the plurality of first mask patterns such that one second mask pattern is arranged between the two first mask patterns adjacent to each other; removing a part of the buffer insulation films and the insulation films to form a plurality of trenches 158 each extending between the first mask pattern and the second mask pattern in parallel with the first mask pattern and the second mask pattern, and a plurality of contact holes 152a which communicate with the trenches, respectively, and expose conductive regions of the semiconductor substrate; and simultaneously forming a plurality of wiring lines 168 which is integrally formed with the contact plugs 162 by filling a conductive material inside the trenches and the contact holes.
申请公布号 JP2013168687(A) 申请公布日期 2013.08.29
申请号 JP20130117185 申请日期 2013.06.03
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 LEE DONG-SEOK;TEI JOHITSU;LEE JI YOUNG
分类号 H01L21/8247;H01L21/336;H01L21/768;H01L23/522;H01L27/115;H01L29/788;H01L29/792 主分类号 H01L21/8247
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