| 摘要 |
A method for manufacturing a Group III nitride semiconductor light-emitting element of the invention includes a substrate-processing process of forming a main surface including a flat surface and a convex portion 13 on the substrate 10, an epitaxial process of epitaxially growing an underlying layer on the main surface of the substrate 10 so as to cover the flat surface and the convex portion 13, and an LED lamination process of forming an LED structure by epitaxially growing a Group III nitride semiconductor. In the substrate-processing process, mask patterns 15 are sequentially formed in respective regions R1 and R2 of the flat surface using a polygonal reticle 51 having two pairs of parallel opposing ends in a plan view, by a stepper exposure method, and then the flat surface is etched to dispose and form three arbitrary convex portions 13, which are arranged to be adjacent to each other, in an isosceles triangular shape in a plan view.
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