The invention relates to a method for producing a solar cell having a substrate made of silicon, which substrate has a silicon oxide layer present on the surface of the substrate and an antireflection layer applied to the silicon oxide layer, which antireflection layer is deposited onto the dielectric passivation layer in a process chamber. According to the invention, in order to achieve a stability of corresponding solar cells or solar cell modules produced therefrom against a potential induced degradation (PID), the dielectric passivation layer is formed from the surface of the substrate in the process chamber by means of a plasma containing an oxidizing gas.
申请公布号
WO2013124394(A2)
申请公布日期
2013.08.29
申请号
WO2013EP53515
申请日期
2013.02.22
申请人
SCHOTT SOLAR AG;MOSCHNER, JENS DIRK;NAGEL, HENNING;LACHOWICZ, AGATA;FIEDLER, MARKUS
发明人
MOSCHNER, JENS DIRK;NAGEL, HENNING;LACHOWICZ, AGATA;FIEDLER, MARKUS