发明名称 |
SEMICONDUCTOR-DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE |
摘要 |
Provided are a semiconductor device and semiconductor-device manufacturing method that make it possible to improve the contact between an insulating film and a wiring member and the reliability thereof. This method for manufacturing a semiconductor device (100) includes a step in which a CF film (106) is formed on top of a semiconductor substrate (102), a step in which grooves (C) corresponding to a wiring pattern (P) are formed in the CF film (106), and a step in which a copper wiring member (114) is embedded in the grooves (C). |
申请公布号 |
WO2013125647(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
WO2013JP54380 |
申请日期 |
2013.02.21 |
申请人 |
TOKYO ELECTRON LIMITED;ZEON CORPORATION;TOHOKU UNIVERSITY |
发明人 |
NEMOTO TAKENAO;SAITO TAKEHISA;TOMITA YUGO;MATSUMOTO HIROKAZU;SHIROTORI AKIHIDE;TERAMOTO AKINOBU;GU XUN |
分类号 |
H01L21/768;H01L21/3205;H01L21/321;H01L23/522;H01L23/532 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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