| 摘要 |
<p>The invention provides a transistor comprising a gate electrode layer; a gate insulating layer over the gate electrode layer; an oxide semiconductor layer over the gate insulating layer; and an oxide insulating layer over and in contact with the oxide semiconductor layer, wherein the oxide semiconductor layer includes indium, zinc, and one or more metal elements selected from gallium, aluminum, manganese, cobalt and tin; and wherein a region of the oxide semiconductor layer is formed of microcrystals c-axis-oriented in a direction perpendicular to a surface of the oxide semiconductor layer.</p> |
