| 摘要 |
PURPOSE: A substrate processing apparatus is provided to deposit a polysilicon layer in a substrate by using two kinds of energy sources at the same time. CONSTITUTION: A plasma generation source(130) is located in the upper part of a substrate mounting stand(120). The plasma generation source passes through a first area of a chamber lid(112). The plasma generation source is installed in a chamber(110). A first optical heat source(150) is installed at the second part of the chamber lid. A power supply unit(160) is connected to the plasma generation source. A second power supply unit(170) is connected to the first optical heat source. A first window(140) of transparent material is installed at the chamber lid. The first optical heat source is installed at the outside of the first window. [Reference numerals] (160) First power supply unit; (170) Second power supply unit |
