CONDUCTIVE MATERIAL STRUCTURE FORMATION METHOD

摘要

PROBLEM TO BE SOLVED: To remedy prolonged time for plating which constitutes barriers to practical use to enable formation of a conductive material structure suitable for achieving three-dimensional packaging by through electrodes in a shorter time.SOLUTION: A plating apparatus 170 forms a conductive film 14 on an entire surface of a substrate W including a surface of a through electrode recess 12 which is formed on the surface of the substrate W; forms a resist pattern 30 at a predetermined position on the surface of the substrate W; immersing the substrate W in a plating solution containing an additive for inhibiting plating growth at an inlet part of the through electrode recess 12; supplying bubbles made of air or nitrogen into the plating solution; and burying a plating film in the through electrode recess 12 and in a resist opening 32 of the resist pattern 30 by performing electrolytic plating with agitating the plating solution so as to cause the bubbles to flow on a whole area of the surface of the substrate W.