发明名称 |
SEMICONDUCTOR DEVICES WITH 2DEG AND 2DHG |
摘要 |
A semiconductor device comprises three semiconductor layers. The semiconductor layers are arranged to form a 2DHG and a 2DEG separated by a polarization layer. The device comprises a plurality of electrodes: first and second electrodes electrically connected to the 2DHG so that current can flow between them via the 2DHG and a third electrode electrically connected to the 2DEG so that when a positive voltage is applied to the third electrode, with respect to at least one of the other electrodes, the 2DEG and the 2DHG will be at least partially depleted.
|
申请公布号 |
US2013221409(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201113812725 |
申请日期 |
2011.06.07 |
申请人 |
NAKAJIMA AKIRA;MADATHIL SANKARA NARAYANAN EKKANATH;THE UNIVERSITY OF SHEFFIELD |
发明人 |
NAKAJIMA AKIRA;MADATHIL SANKARA NARAYANAN EKKANATH |
分类号 |
H01L29/778 |
主分类号 |
H01L29/778 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|