| 摘要 |
An insulated gate bipolar transistor includes a first semiconductor layer of a first conductivity type, a first base layer of a second conductivity type, a second base layer of the second conductivity type, a first emitter layer of the first conductivity type, and a second emitter layer of the first conductivity type. The first semiconductor layer has a first surface. A first trench and a second trench extend from the first surface into the first semiconductor layer. The first gate electrode is provided on the first semiconductor layer, on the first base layer, and on the first emitter layer via a first gate insulating film in the first trench. The second gate electrode is provided on the first semiconductor layer, on the second base layer, and on the second emitter layer via a second gate insulating film in the second trench.
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