NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME

摘要

A GaN-type HFET is equipped with an undoped GaN layer (1) and an undoped AlGaN layer (2) both formed on a Si substrate (10) and ohmic electrodes (a source electrode (11) and a drain electrode (12)) formed on the undoped GaN layer (1) and the undoped AlGaN layer (2). In the ohmic electrodes each comprising a TiAl-type material, the ratio of the number of atoms of Ti to that of Al in a TiAl alloy is 4.0 to 40 atom%. The ohmic annealing temperature for the ohmic electrodes is 450 to 500ºC inclusive. Provided are: a nitride semiconductor device which can be formed at a low heat treatment temperature using ohmic electrodes each having low ohmic contact resistance; and a method for producing the nitride semiconductor device.