| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can increase uniformity of a film thickness of a plating film, and to provide a shielding plate used in the manufacturing method.SOLUTION: A method for manufacturing a semiconductor device includes the steps of: providing a semiconductor wafer 100 including first and second regions; forming a first conductive layer in the first and second regions; mounting the semiconductor wafer to a tool having an electrical connector while bringing the first conductive layer into contact with the electrical connector; immersing the tool mounted with the semiconductor wafer into a plating solution, where a surface on a side of the first conductive layer of the semiconductor wafer normally faces an anode plate while interposing a shielding plate 90a having an opening between the semiconductor wafer and the anode plate; and forming a second conductive layer on the first conductive layer. The shielding plate 90a includes a protrusion extending into the opening thereof. The protrusion faces a part where the electrical connector comes into contact with the first conductive layer in the semiconductor wafer, and a part continuous with the part and overhanging on a central side of the semiconductor wafer. |
