发明名称 |
LED WITH EMBEDDED DOPED CURRENT BLOCKING LAYER |
摘要 |
The present disclosure involves an apparatus. The apparatus includes a photonic die structure that includes a plurality of layers. A current blocking layer is embedded in one of the plurality of layers. The current blocking layer is a doped layer. The present disclosure also involves a method of fabricating a light-emitting diode (LED). As a part of the method, an LED is provided. The LED includes a plurality of layers. A patterned mask is then formed over the LED. The patterned mask contains an opening. A dopant is introduced through the opening to a layer of the LED through either an ion implantation process or a thermal diffusion process. As a result of the dopant being introduced, a doped current blocking component is formed to be embedded within the layer of the LED.
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申请公布号 |
US2013221320(A1) |
申请公布日期 |
2013.08.29 |
申请号 |
US201213405906 |
申请日期 |
2012.02.27 |
申请人 |
LI ZHEN-YU;HSIA HSING-KUO;KUO HAO-CHUNG;TSMC SOLID STATE LIGHTING LTD. |
发明人 |
LI ZHEN-YU;HSIA HSING-KUO;KUO HAO-CHUNG |
分类号 |
H01L33/04 |
主分类号 |
H01L33/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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